High purity metals
Cadmium
Physical Properties
Atomic number: 48
Atomic Weight: 112.411
Melting Point: 321.18°C
Boiling point: 765°C
Density: 8.65g/cm3.
Silver white and slightly bluish luster metal.
Chemical property
Cadmium will be oxidated slowly in the humid air that will lose the metallic luster cadmium and halogen react violently in the high temperature. it can be directly combined with sulfur but not with hydrogen and nitrogen compounds when heating.
Specification
Cd-5N(99.999%), <10 ppm
Cd-6N(99.9999%) ,<1 ppm
Cd-7N(99.99999%), <0.1 ppm
Application: Used for preparation II-VI elements chemical compound semiconductor, high purity alloy, battery solder and control rod of atomic reactor. Used as the material of solar cell, etc.
Tellurium
Physical Properties
Atomic number: 52
Atomic Weight: 127.60
Melting Point: 449.8°C
Boiling point: 1390°C
Density: 6.24 g/cm3
Grey powder or silver white metallic luster crystal,
Chemical properties
It will generate two tellurium oxide when burning in the air or oxygen and it can not react with water or non-oxidative acid. Tellurium with the halogens react violently and produce the tellurium halide. Besides, it can not react with the hvdrogen in high temperature
Specification
Te-5N(99.999%), <10ppm
Te-6N(99.9999%), <1ppm
Te-7N (99.99999%), <0.1 ppm
Application: Used for preparation II-VI elements chemical compound semiconductor, thermo-electricity transfer elements, refrigerating cell, piezoelectric crystal and infrared detector. Used as the material of solar cell etc.
Gallium
Physical Properties
Atomic number: 31
Atomic Weight: 69.72.
Melting Point: 29.78°C
Boiling point: 2403°C
Density: 5.907g/cm3, Liquid density: 5.095 g/cm3
Gallium is a soft metal. Liquid is silvery white and solid is bluish white.
Chemical properties
Erosion is almost not affected by oxygen and water at room temperature. It is oxidized only at high temperature and react with dilute acid slowly.
Specification
Ga-5N(99 999%), <10pm
Ga-6N(99 9999%), <1ppm
Ga-7N(99 99999%), <0.1ppm
Ga-8N(99 999999%)
Application: Used for preparation II - V elements chemical compound semiconductor, high purity alloy and germanium, dopant of mono-crystal silicon.